document number: 93653 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 1 igbt fourpack module, 50 a GB50YF120N vishay high power products features ? square rbsoa ? hexfred ? low q rr , low switching energy ?positive v ce(on) temperature coefficient ? copper baseplate ? low stray inductance design ? speed 8 to 60 khz ? designed and qualified for industrial market benefits ? benchmark efficiency for smps appreciation in particular hf welding ? rugged transient performance ? low emi, requires less snubbing ? direct mounting to heatsink space saving ? pcb solderable terminals ? low junction to ca se thermal resistance product summary v ces 1200 v i c at t c = 66 c 50 a v ce(on) (typical) 3.49 v econo2 4pack rohs compliant absolute maximum ratings parameter symbol test conditions max. units collector to emitter voltage v ces 1200 v continuous collector current i c t c = 25 c 66 a t c = 80 c 44 pulsed collector current see fig. c.t.5 i cm 150 clamped inductive load current i lm 150 diode continuous forward current i f t c = 25 c 40 t c = 80 c 25 diode maximum forward current i fm 150 gate to emitter voltage v ge 20 v maximum power dissipation (igbt) p d t c = 25 c 330 w t c = 80 c 180 maximum operating junction temperature t j 150 c storage temperature range t stg - 40 to + 125 isolation voltage v isol ac 2500 (min) v
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93653 2 revision: 01-sep-08 GB50YF120N vishay high power products igbt fourpack module, 50 a note (1) energy losses include ?tail? and diode reverse recovery electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units collector to emitter breakdown voltage bv (ces) v ge = 0 v, i c = 500 a 1200 - - v collector to emitter voltage v ce(on) i c = 50 a, v ge = 15 v - 3.49 3.9 i c = 75 a, v ge = 15 v - 4.15 4.5 i c = 50 a, v ge = 15 v, t j = 125 c - 4.16 4.5 i c = 75 a, v ge = 15 v, t j = 125 c - 4.97 5.4 gate threshold voltage v ge(th) v ce = v ge , i c = 250 a 4.0 4.9 6.0 threshold voltage temperature coefficient v ge(th) / t j v ce = v ge , i c = 1 ma (25 c to 125 c) - - 10 - mv/c zero gate voltage collector current i ces v ge = 0 v, v ce = 1200 v - 11 250 a v ge = 0 v, v ce = 1200 v, t j = 125 c - 600 1000 diode forward voltage drop v fm i f = 50 a - 3.30 4.5 v i f = 75 a - 3.90 5.0 i f = 50 a, t j = 125 c - 3.6 4.8 i f = 75 a, t j = 125 c - 4.37 5.5 gate to emitter leakage current i ges v ge = 20 v - - 200 na switching characteristics (t j = 25 c unless otherwise noted) parameter symbol test conditions min. typ. max. units total gate charge (turn-on) q g i c = 50 a v cc = 600 v v ge = 15 v - 400 - nc gate to emitter charge (turn-on) q ge -43- gate to collector charge (turn-on) q gc - 187 - turn-on switching loss e on i c = 50 a, v cc = 600 v v ge = 15 v, r g = 4.7 , l = 500 h t j = 25 c (1) -0.93- mj turn-off switching loss e off -1.20- total switching loss e tot -2.13- turn-on switching loss e on i c = 50 a, v cc = 600 v v ge = 15 v, r g = 4.7 , l = 500 h t j = 125 c (1) -1.68- turn-off switching loss e off -1.77- total switching loss e tot -3.46- turn-on delay time t d(on) i c = 50 a, v cc = 600 v v ge = 15 v, r g = 4.7 , l = 500 h t j = 125 c - 128 - ns rise time t r -56- turn-off delay time t d(off) - 292 - fall time t f - 134 - reverse bias safe operating area rbsoa t j = 150 c, i c = 150 a r g = 10 , v ge = 15 v to 0 v fullsquare short circuit safe operating area scsoa t j = 150 c v cc = 900 v, v p = 1200 v r g = 10 , v ge = 15 v to 0 v 10 - - s diode peak reverse recovery current i rr t j = 25 c v cc = 600 v i f = 50 a di/dt = 7 a/s -1.32.3 a t j = 125 c - 2.0 3 diode reverse recovery time t rr t j = 25 c - 0.453 0.49 s t j = 125 c - 0.74 0.82 total reverse recovery charge q rr t j = 25 c - 0.12 0.3 c t j = 125 c - 0.4 1.5
document number: 93653 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 3 GB50YF120N igbt fourpack module, 50 a vishay high power products fig. 1 - maximum dc collector current vs. case temperature fig. 2 - power dissipation vs. case temperature fig. 3 - forward soa t c = 25 c; t j 150 c fig. 4 - reverse bias soa t j = 150 c; v ge = 15 v thermal and mechanical specifications parameter symbol min. typ. max. units junction to case igbt r thjc (igbt) - - 0.38 c/w junction to case diode r thjc (diode) - - 1.00 case to sink, flat, greased surface r thcs (module) - 0.05 - mounting torque (m5) 2.7 - 3.3 nm weight - 170 - g 0 10203040506070 0 20 40 60 80 100 120 140 160 t c (c) i c (a) 0 20406080100120140160 0 50 100 150 200 250 300 350 t c (c) p d (w) 1 10 100 1000 10000 0.01 0.1 1 10 100 1000 v ce (v) ic (a) 10 100 1000 10000 1 10 100 1000 t c (c) p d (w)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93653 4 revision: 01-sep-08 GB50YF120N vishay high power products igbt fourpack module, 50 a fig. 5 - typical igbt output characteristics t j = 25 c; t p = 500 s fig. 6 - typical igbt output characteristics t j = 125 c; t p = 500 s fig. 7 - typical diode forward characteristics t p = 500 s fig. 8 - typical v ce vs. v ge t j = 25 c fig. 9 - typical v ce vs. v ge t j = 125 c fig. 10 - typical tr ansfer characteristics v ce = 20 v; t p = 500 s 01234567 0 20 40 60 80 100 120 140 160 vge = 18v vge = 15v vge = 12v vge = 9v v ce (v) i ce (a) 012345678 0 20 40 60 80 100 120 140 160 vge = 18v vge = 15v vge = 12v vge = 9v v ce (v) i ce (a) 0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 0 20 40 60 80 100 120 140 160 25c 125c v f (v) i f (a) 7 9 11 13 15 17 19 0 2 4 6 8 10 12 14 16 18 20 i ce = 75a i ce = 50a i ce = 25a v ge (v) v ce (v) 7 9 11 13 15 17 19 0 2 4 6 8 10 12 14 16 18 20 i ce = 75a i ce = 50a i ce = 25a v ge (v) v ce (v) 468101214 0 50 100 150 200 250 300 t j = 25c t j = 125c v ge (v) i ce (a)
document number: 93653 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 5 GB50YF120N igbt fourpack module, 50 a vishay high power products fig. 11 - typical zero gate voltage collector current fig. 12 - typical threshold voltage fig. 13 - typical energy loss vs. i c t j = 125 c; l = 200 h; v ce = 600 v, r g = 5 ; v ge = 15 v fig. 14 - typical switching time vs. i c t j = 125 c; l = 200 h; v ce = 600 v, r g = 5 ; v ge = 15 v fig. 15 - typical diode i rec vs. di f /dt v cc = 600 v; i f = 50 a fig. 16 - typical diode t rr vs. di f /dt v cc = 600 v; i f = 50 a 400 600 800 1000 1200 0.001 0.01 0.1 1 t j = 125c t j = 25c v ces (v) i ces (ma) 0 0.2 0.4 0.6 0.8 1 2 2.5 3 3.5 4 4.5 5 5.5 t j = 125c t j = 25c i c (ma) v geth (v) 020406080100 0.5 1 1.5 2 2.5 3 3.5 4 4.5 e on e off i c (a) energy (mj) 0 20 40 60 80 100 0.01 0.1 1 t r td off t f td on i c (a) switching time (s) 0 20 40 60 80 100 0 2 4 6 8 10 12 125c 25c di f/ dt (a/s) i rr (a) 0 20 40 60 80 100 0 100 200 300 400 500 600 700 800 125c 25c di f/ dt (a/s) t rr (ns)
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93653 6 revision: 01-sep-08 GB50YF120N vishay high power products igbt fourpack module, 50 a fig. 17 - typical diode q rr vs. di f /dt v cc = 600 v; i f = 50 a fig. 18 - typical gate charge vs. v ge i ce = 5.0 a; l = 600 h fig. 19 - maximum transi ent thermal impedance, junction to case (igbt) fig. 20 - maximum transient thermal impedance, junction to case (diode) 0 20 40 60 80 100 0 200 400 600 800 1000 1200 1400 1600 125c 25c di f/ dt (a/s) q rr (nc) 0 100 200 300 400 500 0 2 4 6 8 10 12 14 16 typical value q g , total gate charge (nc) v ge (v) 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 1e-005 0.0001 0.001 0.01 0.1 1 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response ) t 1 , rectangular pulse duration (sec) thermal response (z thjc ) 1e-006 1e-005 0.0001 0.001 0.001 0.01 0.1 1 10 0.20 0.10 d = 0.50 0.01 0.02 0.05 single pulse ( thermal response ) t 1 , rectangular pulse duration (sec) thermal response (z thjc )
document number: 93653 for technical ques tions, contact: ind-modules@vishay.com www.vishay.com revision: 01-sep-08 7 GB50YF120N igbt fourpack module, 50 a vishay high power products fig. c.t.1 - gate charge circuit (turn-off) fig. c.t.2 - rbsoa circuit fig. c.t.3 - s.c. soa circuit fig. c.t.4 - switching loss circuit fig. c.t.5 - resistive load circuit 1k v cc d.u.t. 0 l + - l 80 v r g 1000 v d.u.t. + - driver d.u.t. 900 v d c + - l diode clamp/ d.u.t. d.u.t./ driver - 5 v + - r g v cc + - r g d.u.t. r = v cc i cm v cc + -
www.vishay.com for technical questi ons, contact: ind-modules@vishay.com document number: 93653 8 revision: 01-sep-08 GB50YF120N vishay high power products igbt fourpack module, 50 a ordering information table circuit configuration 1 - insulated gate bipolar transistor (igbt) 2 - b = igbt generation 5 npt 3 - current rating (50 = 50 a) 4 - circuit configuration (y = fourpack) 5 - package indicator (f = econo2) 6 - voltage rating (120 = 1200 v) 7 - speed/type (n = ultrafast with reduced diode, speed 8 to 60 khz) device code 5 13 24 67 g b 50 y f 120 n 4 8 , 49 40 41 5, 6, 7 3 6 3 7 46, 47 21, 22 2 8 29 3 2 33 2 3 , 24 15, 16, 17 links to related documents dimensions http://www.vishay.com/doc?95252
document number: 95252 for tec hnical questions, contact: indmodules@vishay.com www.vishay.com revision: 29-nov-07 1 econo2 4pak outline dimensions vishay semiconductors dimensions in millimeters (inches) z y 20.5 + 1.0 - 0.5 105 0.1 13.2 0.15 0.8 1.25 - 0.02 - 0.06 0.8 0.03 x 2:1 34.29 30.48 22.86 19.05 30.48 22.86 19.05 34.29 30.48 22.86 19.05 26.67 39.49 93 0.15 107.8 0.2 22.86 19.05 26.67 34.29 39.49 15.24 21 0.03 21 0.03 5.5 0.05 10.5 45.4 0.2 42 0.15 7.5 0 - 0 3 11.43 detail r 3 10.5 83 0 - 0.2 z 2:1 0.6 0.5 0.8 0.03 y 2:1 0.85 1 1.25 - 0.02 - 0.06 2 49 4 5 6 7 810 12 15 16 17 19 48 47 46 44 43 41 40 38 37 36 35 33 32 30 2928 27 26 24 23 22 21 11.43 7.62 7.62 11.43 11.43 7.62 7.62 3.81 7.62 7.62 11.43
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